1.5V Drive Pch MOSFET
RW1A020ZP
Structure
Dimensions (Unit : mm)
WEMT6
Silicon P-channel MOSFET
Features
1) Low on-resistance.
(6)
(5)
(4)
2) High power package.
(1)
(2)
(3)
3) Low voltage drive. (1.5V)
Abbreviated symbol : ZE
Applications
Inner circuit
Switching
Packaging specifications
Package
Code
Type
Basic ordering unit (pieces)
Taping
T2R
8000
(6)
(5)
? 2
? 1
(4)
(1) Drain
RW1A020ZP
(1)
(2)
(3)
(2) Drain
(3) Gate
(4) Source
Absolute maximum ratings (Ta=25 ° C)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(5) Drain
(6) Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 12
± 10
Unit
V
V
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
P D
Tch
Tstg
? 1
? 1
? 2
± 2
± 6
? 0.5
? 6
0.7
150
? 55 to + 150
A
A
A
A
W
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 When mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
179
Unit
° C / W
? When mounted on a ceramic board.
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1/4
2009.05 - Rev.A
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